SCI SCIE
MICROELECTRONICS RELIABILITY 期刊简介
英文简介:

icroelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field. Additional regular features will include: • Special issues devoted to significant international conferences, or to important developing topics • Letters to the Editors • Industrial news and updates • Calendar of forthcoming events • Book reviews Microelectronics Reliability is an indispensable forum for the exchange of knowledge and experience between microelectronics reliability professionals from both academic and industrial environments, and all those associated in any way with a steadily growing microelectronics industry and its many fields of application.

中文简介:(来自Google、百度翻译)

《微电子可靠性》致力于传播有关微电子器件、电路和系统可靠性的最新研究成果和相关信息,从材料、工艺和制造,到设计、测试和操作。杂志的内容包括:测量、理解和分析;评估和预测;建模与仿真;方法和缓解。将可靠性与微电子工程的其他重要领域,如设计、制造、集成、测试和现场操作相结合的论文也将受到欢迎,并特别鼓励在该领域和具体应用领域报告实际案例研究的论文。 大多数被接受的论文将作为研究论文发表,描述重大进展和完成的工作。审查一般感兴趣的重要发展主题的论文可以作为审查论文发表。可以考虑将性质较初步的紧急来文和关于目前感兴趣的已完成实际工作的简短报告作为研究说明出版。所有的贡献都要经过该领域主要专家的同行审查。 其他常规功能包括: •专门讨论重大国际会议或重要发展主题的专题 •给编辑的信 •行业新闻和更新 •即将举行活动的日历 •书评 微电子可靠性是一个不可或缺的论坛,在学术和工业环境的微电子可靠性专业人士之间,以及所有那些以任何方式与一个稳步增长的微电子工业及其许多应用领域相关的人之间,交流知识和经验。

期刊ISSN
0026-2714
最新的影响因子
1.6
最新CiteScore值
1.52
最新自引率
18.60%
期刊官方网址
http://www.journals.elsevier.com/microelectronics-reliability/
期刊投稿网址
http://ees.elsevier.com/mr/
通讯地址
PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND, OX5 1GB
偏重的研究方向(学科)
工程技术-工程:电子与电气
出版周期
Monthly
平均审稿速度
较快,2-4周&来源Elsevier官网:平均8.3周
出版年份
1964
出版国家/地区
ENGLAND
是否OA
No
SCI期刊coverage
Science Citation Index Expanded(科学引文索引扩展)
NCBI查询
PubMed Central (PMC)链接 全文检索(pubmed central)
MICROELECTRONICS RELIABILITY 期刊中科院JCR 评价数据
最新中科院JCR分区
大类(学科)
小类(学科)
JCR学科排名
物理
ENGINEERING, ELECTRICAL & ELECTRONIC(工程学,电气和电子) 3区 NANOSCIENCE & NANOTECHNOLOGY(纳米科学和纳米技术) 4区 PHYSICS, APPLIED(物理学,应用) 3区
183/260 81/92 106/146
最新的影响因子
1.6
最新公布的期刊年发文量
年度总发文量 年度论文发表量 年度综述发表量
403 394 9
总被引频次 6983
特征因子 0.006730
影响因子趋势图
2007年以来影响因子趋势图(整体平稳趋势)
MICROELECTRONICS RELIABILITY 期刊CiteScore评价数据
最新CiteScore值
1.52
=
引文计数(2018) 文献(2015-2017)
=
1932次引用 1272篇文献
文献总数(2014-2016) 1272
被引用比率
60%
SJR
0.388
SNIP
0.907
CiteScore排名
序号 类别(学科) 排名 百分位
1 Materials Science Electronic, Optical and Magnetic Materials #
CiteScore趋势图
CiteScore趋势图
scopus涵盖范围
scopus趋势图
MICROELECTRONICS RELIABILITY 投稿经验(由下方点评分析获得,0人参与,244人阅读)
偏重的研究方向:
  • 暂无
投稿录用比例: 暂无
审稿速度: 暂无
分享者 点评内容
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基础信息
中科院JCR评价数据
CiteScore评测数据
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